In April 2025, China's semiconductor industry achieved a milestone breakthrough - a leading domestic equipment company announced that its independently developed "sub angstrom level silicon oxide etching system" had officially entered mass production, marking China's global leadership in semiconductor manufacturing core processes. The system redefines the performance boundary of silicon oxide thin films in advanced processes with an etching accuracy of 0.2 angstroms (approximately 1/10 of atomic diameter).

Technological Breakthrough: The Leap from "Micron" to "Ayer"
Traditional silicon oxide thin films play a key role in insulation, passivation, masking, and other processes in semiconductors, but due to limitations in etching accuracy, they are difficult to meet the process requirements of 3 nanometers and below. The sub angstrom level system achieved this breakthrough has improved the thickness uniformity of silicon oxide films to the 0.01 nanometer level through dual reaction stage design and ultra precision gas control technology, far exceeding similar international equipment. For example, in the production of ultra-thin gate oxide layers required for 5G chips, this technology can reduce transistor leakage current by 70% and power consumption by 35%.

Industrial Applications: Empowering AI and Quantum Computing
In the field of artificial intelligence, GPU chips equipped with sub angstrom silicon oxide thin films have achieved a 40% increase in energy efficiency, providing support for the explosion of computing power in data centers; In quantum computing, its ultra-low defect density characteristic extends the entanglement lifetime of quantum bits to the millisecond level, paving the way for the commercialization of general-purpose quantum computers.

Ecological Collaboration: Closed loop Innovation from Equipment to Materials
Behind technological breakthroughs lies the deep synergy of the industrial chain. Domestic material companies have simultaneously launched the "999 purity silicon oxide target material", which, in conjunction with equipment, achieves independent controllability from raw materials to processes. According to calculations, this technology can increase the yield of chips with a process size of less than 7 nanometers from 65% to 92%, and promote the self-sufficiency rate of domestic chips to exceed 30% within three years.

"Silicon oxide thin films have leapt from a 'supporting role' to a 'stealth engine' of semiconductor technology." Industry experts said that with the popularity of new architectures such as 3D stacking and photonic chips, the Ya'ang precision will become the "ticket" for the next generation of chips. This precision revolution triggered by silicon oxide is reshaping the global semiconductor industry landscape.