Silazane, as an insulating layer material, exhibits the following stability characteristics at different temperatures:
Low temperature environment (usually below room temperature, such as around -40 ℃ to 0 ℃)
Under low temperature conditions, the insulation layer formed by silazane generally maintains good physical and chemical stability. Its molecular structure is relatively stable and will not show obvious cracking, peeling or other phenomena due to low temperature. For example, in some electronic devices used in low-temperature environments, such as electronic instruments used in polar research and microelectronic devices carried by space probes in cold outer space environments, the insulating layer made of silicon nitride can stably exert its insulating effect, prevent abnormal leakage of current, and ensure the normal operation of electronic components at low temperatures. This is due to the strong chemical bond energy of silazane itself and the dense structure formed, which enables it to withstand stress changes such as shrinkage caused by low temperatures, maintaining effective isolation and protection of electronic circuits.
Normal temperature environment (generally referring to 15 ℃ to 35 ℃)
The stability of the silicon nitride insulation layer is optimal within the normal temperature range for daily use. It can exist stably on the surface of semiconductor chips, electronic circuit boards, etc. for a long time, effectively isolating the current conduction between different conductive layers and ensuring accurate transmission of electronic signals. Its dielectric properties remain relatively constant and are not easily affected by common humidity and slight chemical exposure in the external environment (such as small amounts of carbon dioxide, sulfur dioxide, etc. in the atmosphere), providing reliable insulation protection for the stable operation of electronic devices. For example, the internal insulation layer of chips in electronic products such as mobile phones and computers that we use in our daily lives, if prepared with silicon nitride, can maintain good insulation performance at room temperature for many years, ensuring the normal operation, communication and other functions of the equipment.
Medium temperature environment (approximately between 100 ℃ and 300 ℃)
As the temperature rises to the medium temperature range, the silicon nitride insulation layer can still maintain high stability. Within this temperature range, the chemical bonds of silazane begin to vibrate and intensify to a certain extent, but the overall structure remains intact. It can withstand the heat accumulation generated by electronic devices during normal operation, such as the temperature rise around some slightly high-power electronic components. The silicon nitride insulation layer can effectively prevent the insulation performance from decreasing due to temperature rise and continue to function as an isolation conductive layer. However, when exposed to high temperatures close to 300 ℃ for a long time, there may be a very slight thermal decomposition phenomenon, and a small amount of small molecules may begin to evaporate. However, as long as it does not remain in this high-temperature limit state for a long time, the decrease in insulation performance is relatively small and will not affect the normal operation of electronic devices.
High temperature environment (above 300 ℃)
When the temperature exceeds 300 ℃ and further increases, the stability of the silicon nitride insulation layer will gradually be greatly affected. High temperature can cause a large number of chemical bonds in silazane molecules to break, first undergoing a gradual thermal decomposition reaction, releasing hydrogen gas, ammonia gas, and some small molecule compounds containing silicon, causing its originally dense structure to become loose and its insulation performance to significantly decrease. For example, in extreme process scenarios such as high-temperature sintering, without additional protective measures, the silicon nitride insulation layer cannot continue to maintain effective insulation function. However, through some modification methods, such as adding high-temperature resistant inorganic fillers, its high-temperature resistance can be improved to a certain extent, allowing it to maintain relatively usable insulation performance at higher temperatures (such as around 500 ℃). However, compared to normal and medium temperature environments, its stability is still significantly reduced.
Overall, silazane as an insulating layer material has good stability in low to medium temperature environments, which can meet the insulation requirements of most conventional electronic devices and some special low and medium temperature application scenarios. However, in high temperature environments, special treatment or appropriate modification schemes are needed to maintain its stability and insulation performance.
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