In addition to temperature, the following factors can also affect the stability of the silicon nitride insulation layer:
humidity
Mechanism of influence: Changes in humidity in the environment mean changes in moisture content. When the humidity is high, water molecules may adsorb on the surface of the silicon nitride insulation layer and even gradually penetrate into the insulation layer through diffusion and other means. Some chemical bonds in silazane may undergo hydrolysis reactions with water molecules, especially the silicon nitrogen bonds, silicon oxygen bonds, etc. Once this hydrolysis reaction occurs, it will destroy the original molecular structure of silazane, making it loose and affecting the density and integrity of the insulation layer, resulting in a decrease in insulation performance. For example, in some humid southern regions, if electronic devices do not have good moisture-proof measures and are exposed to high humidity environments for a long time, the silicon nitride insulation layer is prone to performance degradation due to moisture.
Response measures: Usually, moisture-proof measures such as sealed packaging, adding desiccants, and adding hydrophobic modifiers to silazane materials can be used to improve their moisture resistance and reduce the impact of humidity on the stability of the insulation layer.
Chemical contact
Influence of acidic or alkaline substances: When the silicon nitride insulation layer comes into contact with acidic or alkaline substances, a chemical reaction will occur. For example, acidic substances may react with elements such as silicon and nitrogen in silazane, disrupting their chemical bond structure, while alkaline substances can also promote the intensification of reactions such as silazane hydrolysis. In some industrial environments, if electronic devices are exposed to spaces with acidic and alkaline volatile substances, the silicon nitride insulation layer will be quickly eroded, and the insulation performance will be greatly reduced.
Influence of organic solvents: Some organic solvents may also have adverse effects on the silicon nitride insulation layer. Some organic solvents can dissolve or swell silazane, increasing its molecular chain spacing and structural deformation, thereby changing its insulation properties and physical stability. For example, in the process of cleaning electronic devices, if inappropriate organic solvents are used, it may cause damage to the silicon nitride insulation layer.
Response measures: Protective coatings can be applied to the surface of silicon nitride materials, or chemically modified to introduce some chemically corrosion-resistant functional groups to enhance their resistance to various chemicals. At the same time, when using and storing electronic devices, try to avoid contact with potentially harmful chemicals.
Mechanical stress
Tensile and compressive stress effects: During the assembly and use of electronic devices, the silicon nitride insulation layer may be subjected to mechanical stresses such as tensile and compressive stress. For example, during operations such as bending circuit boards and plugging electronic components, the insulation layer will deform accordingly. If the stress is too high and frequently applied, it may cause cracks, peeling, and other damage to the silicon nitride insulation layer, disrupting its continuity and making the insulation performance unable to be guaranteed, which can easily lead to electrical faults such as short circuits.
Response measures: Optimize the structural design of electronic devices, reduce unnecessary mechanical stress generation, and improve the flexibility and adhesion of the silicon nitride insulation layer itself, such as by adding toughening agents to enhance its ability to resist mechanical stress damage.
irradiation
Ionizing radiation effects: In some special environments, such as space environments, nuclear radiation environments, etc., the silicon nitride insulation layer will be subjected to ionizing radiation, such as gamma rays, high-energy electron beams, and other radiation effects. These irradiation energies can cause electronic transitions and chemical bond breaks in silicon nitride molecules, generating active intermediates such as free radicals, which in turn trigger a series of chain reactions, leading to changes in molecular chains such as degradation and cross-linking, ultimately affecting the stability and performance of the insulation layer.
Effects of UV irradiation: Long term exposure to UV radiation, even the UV part of daily sunlight, can have an impact on the silicon nitride insulation layer, causing its surface to gradually age and become brittle, reducing its insulation and protective functions.
Response measures: Anti radiation agents, such as compounds containing specific metal ions, can be added to absorb or scatter radiation energy, reducing its direct damage to silazane molecules. At the same time, protective measures such as avoiding light can also be taken to mitigate the effects of ultraviolet radiation.
electric field intensity
Mechanism of influence: When the electric field strength of the silicon nitride insulation layer is too high, it may cause electrical breakdown phenomenon. Under the action of a strong electric field, the originally bound electrons inside the insulation layer will gain enough energy to break free and become free electrons, forming a conductive channel and leading to insulation failure. And as the electric field strength continues to increase, the risk of electrical breakdown will further increase, seriously affecting the stability of the silicon nitride insulation layer.
Response measures: When designing electronic devices, the voltage distribution in the circuit should be reasonably controlled to avoid excessive electric field strength in the insulation layer. At the same time, the resistance to electrical breakdown can be improved by increasing the thickness of the silicon nitride insulation layer and improving its dielectric performance.
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