Chemical modification
Introducing heat-resistant functional groups: Introducing some highly heat-resistant functional groups, such as aryl groups (such as phenyl groups), into the structure of silazane molecules through chemical reactions. These functional groups can increase the rigidity and thermal stability of the molecule, making it difficult for the chemical bonds of the silicon nitride insulation layer to break at high temperatures, thereby enhancing its stability at higher temperatures. For example, by copolymerizing silane monomers containing phenyl groups with silazane, the modified silazane obtained can better maintain its molecular structure integrity compared to unmodified products at higher temperatures, thereby ensuring stable insulation performance.
Enhancing hydrolysis resistance groups: To cope with the influence of humidity, hydrophobic groups such as alkyl and fluorinated alkyl groups can be introduced into silazane. These functional groups can reduce the adsorption capacity of silazane for water molecules and decrease the probability of hydrolysis reactions. By adding fluorosilane compounds for modification during the synthesis of silazane, the final insulation layer surface has better hydrophobicity. Even in humid environments, water molecules are difficult to penetrate into the insulation layer, effectively improving its stability in humid environments.
Composite modification
Adding inorganic fillers: Adding high-temperature resistant inorganic fillers such as titanium dioxide, aluminum oxide, boron nitride, etc. to silazane. These inorganic fillers can act as physical barriers and reinforcements, sharing heat at high temperatures, hindering the rapid transfer of heat to silazane molecules, and delaying their thermal decomposition process. Meanwhile, inorganic fillers can enhance the mechanical properties of the insulation layer, making it more resistant to mechanical stresses such as tension and compression. For example, by mixing a certain proportion of boron nitride nanosheets into silazane, at high temperatures, the boron nitride nanosheets can form an obstruction channel for heat conduction, improve the high-temperature stability of the entire insulation layer, and also increase the hardness of the insulation layer, reducing the possibility of damage caused by external forces.
Combining polymer materials: compounding silazane with some polymer materials that have good flexibility, chemical resistance, and other characteristics. For example, when blended with polymers such as polyimide, polyimide can compensate for the lack of flexibility of silazane, improve the overall bending and tensile resistance of the insulation layer, and also have certain chemical corrosion resistance and high temperature resistance. The synergistic effect of the two can enhance the stability of the insulation layer in various complex environments, making it more suitable for application in electronic devices that require frequent bending and may come into contact with chemical substances.
Optimize the preparation process
Control deposition conditions (taking chemical vapor deposition as an example): When preparing a silicon nitride insulating layer through chemical vapor deposition (CVD) process, accurately control parameters such as reaction temperature, reaction gas flow rate, and reaction pressure. Appropriate reaction temperature can ensure uniform deposition of silazane and regular molecular structure, avoiding defects caused by high or low temperature; A reasonable gas flow rate can ensure that the reactants participate fully and uniformly in the reaction, resulting in a uniform thickness and good density of the deposited insulation layer; A stable reaction pressure helps to form a quality stable insulation layer. For example, when using CVD to prepare silicon nitride insulation layers in chips, controlling the reaction temperature within a specific range and adjusting the flow rates of silicon source gas and carrier gas can obtain high-quality and stable insulation layers.
Improve curing quality (for liquid silazane): For silazane coated in liquid form and then cured to form an insulation layer, optimize curing process parameters such as curing temperature, curing time, and lighting conditions during curing (if it is a photopolymerization system). Adequate and appropriate curing can form a more complete cross-linking structure between silicon nitride molecules, improve the density and mechanical strength of the insulation layer, and enhance its stability. For example, using light cured silazane coatings, selecting appropriate photoinitiators, and controlling the light intensity and duration to ensure that the silazane is fully cured, thereby improving the comprehensive performance of the insulation layer.
Surface protection treatment
Coating protective layer: Apply a layer of specific protective coating on the surface of the silicon nitride insulation layer, such as a hydrophobic coating that can block the invasion of external moisture, and an antioxidant coating that can slow down the aging rate of the insulation layer due to contact with oxygen. For example, coating a hydrophobic layer containing fluorine on the surface of the silicon nitride insulation layer can effectively prevent water molecules from contacting the main body of the silicon nitride insulation layer and maintain its stability even in high humidity environments.
Passivation treatment: Using chemical methods to passivate the surface of the silicon nitride insulation layer, forming a more stable and chemically less active protective film on its surface. For example, by using plasma treatment and other methods, stable chemical bonds can be introduced on the surface of the insulation layer or a thin passivation film can be applied to reduce its contact reaction with chemicals, water vapor, and other substances in the external environment, thereby improving stability.
Optimize the usage environment and design
Control environmental conditions: During the use and storage of electronic devices, try to control the temperature and humidity of the environment as much as possible, avoid exposure to harmful chemicals such as strong acids and bases, organic solvents, and unfavorable environments such as strong radiation and high electric field strength. For example, placing electronic devices in a room with constant temperature and humidity, or implementing protective measures such as sealed packaging, can reduce the impact of external environmental factors on the stability of the silicon nitride insulation layer.
Reasonable circuit and structural design: In the circuit design of electronic devices, voltage should be allocated reasonably to avoid excessive electric field strength in the insulation layer, which may cause electrical breakdown. At the same time, in terms of structural design, reduce the mechanical stress on the insulation layer caused by operations such as plugging and bending, ensure that the insulation layer is uniformly and stably stressed during use, and guarantee its long-term stable insulation function.
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